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 2SC5100
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5100 160 120 6 8 3 75(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Audio and General Purpose
(Ta=25C) 2SC5100 10max 10max 120min 50min 0.5max 20typ 200typ V MHz
16.2
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB hFE Rank Conditions VCB=160V VEB=6V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A VCE=12V, IE=-0.5A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6
Unit
A
23.00.3
V
9.50.2
A
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8
O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 40 RL () 10 IC (A) 4 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.4 IB2 (A) -0.4 ton (s) 0.13typ tstg (s) 3.50typ tf (s) 0.32typ
3.35
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
350m
V CE ( sat ) - IB Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at)( V ) 3
I C - VBE Temperature Characteristics (Typical)
8 (V C E= 4V)
A
8
0m
20
15
0m
A
A
1
A 00m
75 m A
Collector Current I C( A)
2
50m A
Collector Current I C (A)
6
6
4
4
mp)
mp)
Cas
C (
2
2
(Cas
IB=10mA
IC=8A 0 2A 0.6 4A 0.8 1.0 0 0
0
0
1
2
3
4
0
0.2
0.4
0.5
-30C
25C
125
(Case
1
e Te
20mA
e Te
Temp
1.0
)
Collector-Emitter Voltage V C E( V)
Base Current I B( A)
Base-Emittor Voltage V B E( V)
hFE - I C Characteristics (Typical)
(VCE=4V) 200 DC C urrent G ain h FE
h FE - I C Temperature Characteristics (Typical)
(V C E= 4V) 200 125C DC Curr ent Gain h FE
j- a( C/W)
j-a - t Characteristics
4
Typ
100
100
25C -30C
Transient Thermal Resistance
1
50
50
0.5
20 0.02
0.1
0.5
1
5
8
20 0.02
0.1
0.5
1
5
8
0.2
1
10
100 Time t(ms)
1000 2000
Collector Current I C( A)
Collector Current I C (A)
fT - IE Characteristics (Typical)
(VCE=12V) 40 20 10
Safe Operating Area (Single Pulse)
80
P c - T a Derating
Cut -off Fre quen cy f T( MH Z)
30
Ma xim um Powe r Dissipation P C( W)
5
Typ
Collecto r Cur ren t I C( A)
DC
60
20
40
1 0.5 Without Heatsink Natural Cooling
10
20
Without Heatsink 0 -0.02 -0.1 -1 Emitter Current I E( A) -8 0.1 5 10 50 100 150 3.5 0 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
126
3.0
1.5
10 m s
10 0m
W
s
ith In fin ite he at si nk


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